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BUZ 110 S
SPP80N05
SIPMOS (R) Power Transistor
* N channel * Enhancement mode * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 80 A
RDS(on) 0.012
Package
Ordering Code
BUZ 110 S
TO-220 AB
Q67040-S4005-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 C TC = 100 C
ID
A 80 66
Pulsed drain current
TC = 25 C
IDpuls
320
E AS
Avalanche energy, single pulse
ID = 80 A, V DD = 25 V, RGS = 25 L = 144 H, Tj = 25 C
mJ
460
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
80 20
A mJ kV/s
dv/dt
6
V GS P tot
Gate source voltage Power dissipation
TC = 25 C
20
200
V W
Semiconductor Group
1
28/Jan/1998
BUZ 110 S
SPP80N05
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
C
0.75 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 200 A
V GS(th)
2.1
IDSS
3
4 A
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C
IGSS
0.1 -
0.1 1 100 nA
Gate-source leakage current
V GS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
V GS = 10 V, ID = 66 A
0.009 0.012
Semiconductor Group
2
28/Jan/1998
BUZ 110 S
SPP80N05
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Dynamic Characteristics
Transconductance
V DS 2 * ID * RDS(on)max, ID = 66 A
gfs
S 30 pF 2420 3025
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
745
930
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
380
475 ns
Turn-on delay time
V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9
tr
20
30
Rise time
V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9
td(off)
35
55
Turn-off delay time
V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9
tf
45
70
Fall time
V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9
Qg(th)
30
45 nC
Gate charge at threshold
V DD = 40 V, ID 0.1 A, V GS =0 to 1 V
Qg(7)
3
4.5
Gate charge at 7.0 V
V DD = 40 V, ID = 80 A, VGS =0 to 7 V
Qg(total)
65
100
Gate charge total
V DD = 40 V, ID = 80 A, VGS =0 to 10 V
V (plateau)
85
130 V
Gate plateau voltage
V DD = 40 V, ID = 80 A
Semiconductor Group
3
5.8
28/Jan/1998
BUZ 110 S
SPP80N05
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 C
IS
A 80
Inverse diode direct current,pulsed
TC = 25 C
ISM
V SD
-
320 V
Inverse diode forward voltage
V GS = 0 V, IF = 160 A
trr
1.28
2 ns
Reverse recovery time
V R = 30 V, IF=lS, diF/dt = 100 A/s
Qrr
80
120 C
Reverse recovery charge
V R = 30 V, IF=lS, diF/dt = 100 A/s
-
17
25
Semiconductor Group
4
28/Jan/1998
BUZ 110 S
SPP80N05
Power dissipation Ptot = (TC)
Drain current ID = (TC) parameter: VGS 10 V
90 A ID 70 60
220 W Ptot 180 160 140 120 100 80 60
50 40 30 20
40 20 0 0 20 40 60 80 100 120 140 C 180 10 0 0 20 40 60 80 100 120 140 C 180
TC
TC
Safe operating area ID = (VDS) parameter: D = 0, TC = 25C
10 3
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
A ID 10 2
R V =
DS
t = 8.7s p 10 s
K/W ZthJC
/I
D
10 -1
DS (o n)
100 s
10 -2 D = 0.50 0.20 10
1 1 ms
0.10 10 -3 0.05 0.02 single pulse 0.01
10 ms
DC
10 0 0 10
10
1
V 10
2
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
28/Jan/1998
BUZ 110 S
SPP80N05
Typ. output characteristics ID = (VDS) parameter: tp = 80 s
180 A ID
V [V] h GS
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
0.038
Ptot = 200W l
kj i
a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
a
b
c
d
e
f
140 120 100 80 60
d g
0.032 RDS (on) 0.028 0.024 0.020 0.016
g
c d e
ff
g h
e
i j k l
0.012
i
h j VGS [V] =
a 4.5 4.0 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0
40
c
0.008 0.004
b a
20 0
0.000 V 5.0 0 20 40 60 80 100 120 140 A 170
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS
ID
Typ. transfer characteristics ID = f (V GS)
parameter: tp = 80 s
VDS2 x ID x RDS(on)max
70
A
I
D
50
40
30
20
10
0 0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconductor Group
6
28/Jan/1998
BUZ 110 S
SPP80N05
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 66 A, VGS = 10 V
0.038
Gate threshold voltage
V GS(th)= f (Tj)
parameter:VGS=VDS, ID =200A
5.0 V 4.4
VGS(th)
0.032 RDS (on) 0.028
4.0 3.6
0.024 0.020 98% 0.016 typ 0.012 0.008 0.004 0.000 -60 -20 20 60 100 C 180
3.2 2.8 2.4 2.0 1.6
typ max
1.2 0.8 0.4 0.0 -60 -20 20 60 100 140 V
Tj
min
200
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 3
A
C
pF
Ciss
IF 10 2
10 3
Coss
10 1 Tj = 25 C typ
Crss
Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%)
10 2 0
5
10
15
20
25
30
V
VDS
40
10 0 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
28/Jan/1998
BUZ 110 S
SPP80N05
Avalanche energy EAS = f (Tj) parameter:ID=80 A,VDD =25 V RGS =3.8 , L = 144 H
500 mJ
EAS
Typ. gate charge VGS = (QGate) parameter: ID puls = 80 A
16
V VGS
400 350 300 250 200 150
12
10 0,2 VDS max 8 0,8 VDS max
6
4 100 50 0 20 40 60 80 100 120 140 C
Tj
2 0 180 0 20 40 60 80 100 nC 130
Q Gate
Drain-source breakdown voltage V(BR)DSS = (Tj)
65
V V(BR)DSS
61
59
57
55
53
51 49 -60
-20
20
60
100
C
180
Tj
Semiconductor Group
8
28/Jan/1998

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